发明名称 Pressurized microbubble thin film separation process using a reusable substrate
摘要 A technique for forming films of material (14) from a donor substrate (10). The technique has a step of introducing gas-forming particles (12) through a surface of a donor substrate (10) to a selected depth underneath the surface. The gas-forming particles form a layer of microbubbles within the substrate. A global heat treatment of the substrate then creates a pressure effect to separate a thin film of material from the substrate. Additional gas-forming particles are introduced into the donor substrate and a second thin film of material is then separated from the donor substrate. In a specific embodiment, the gas-forming particles are implanted using a plasma immersion ion implantation method.
申请公布号 US6146979(A) 申请公布日期 2000.11.14
申请号 US19980026032 申请日期 1998.02.19
申请人 SILICON GENESIS CORPORATION 发明人 HENLEY, FRANCOIS J.;CHEUNG, NATHAN W.
分类号 B24C1/00;B26F3/00;B26F3/02;B32B5/16;B81C1/00;H01L21/00;H01L21/18;H01L21/20;H01L21/22;H01L21/223;H01L21/265;H01L21/30;H01L21/301;H01L21/302;H01L21/304;H01L21/36;H01L21/38;H01L21/425;H01L21/44;H01L21/46;H01L21/461;H01L21/48;H01L21/50;H01L21/762;H01L21/78;H01L21/8238;(IPC1-7):H01L21/30 主分类号 B24C1/00
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