发明名称 |
Pressurized microbubble thin film separation process using a reusable substrate |
摘要 |
A technique for forming films of material (14) from a donor substrate (10). The technique has a step of introducing gas-forming particles (12) through a surface of a donor substrate (10) to a selected depth underneath the surface. The gas-forming particles form a layer of microbubbles within the substrate. A global heat treatment of the substrate then creates a pressure effect to separate a thin film of material from the substrate. Additional gas-forming particles are introduced into the donor substrate and a second thin film of material is then separated from the donor substrate. In a specific embodiment, the gas-forming particles are implanted using a plasma immersion ion implantation method.
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申请公布号 |
US6146979(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19980026032 |
申请日期 |
1998.02.19 |
申请人 |
SILICON GENESIS CORPORATION |
发明人 |
HENLEY, FRANCOIS J.;CHEUNG, NATHAN W. |
分类号 |
B24C1/00;B26F3/00;B26F3/02;B32B5/16;B81C1/00;H01L21/00;H01L21/18;H01L21/20;H01L21/22;H01L21/223;H01L21/265;H01L21/30;H01L21/301;H01L21/302;H01L21/304;H01L21/36;H01L21/38;H01L21/425;H01L21/44;H01L21/46;H01L21/461;H01L21/48;H01L21/50;H01L21/762;H01L21/78;H01L21/8238;(IPC1-7):H01L21/30 |
主分类号 |
B24C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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