发明名称 Optoelectronic semiconductor component
摘要 An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.
申请公布号 US6147365(A) 申请公布日期 2000.11.14
申请号 US19990364898 申请日期 1999.08.02
申请人 INFINEON TECHNOLOGIES AG 发明人 FISCHER, FRANK;LITZ, THOMAS;LUGAUER, HANS-JUERGEN;KEIM, MARKUS;BARON, THIERRY;REUSCHER, GUENTER;LANDWEHR, GOTTFRIED
分类号 H01L33/00;H01S5/042;H01S5/30;H01S5/34;H01S5/347;(IPC1-7):H01L29/22;H01L31/025 主分类号 H01L33/00
代理机构 代理人
主权项
地址