发明名称 |
Optoelectronic semiconductor component |
摘要 |
An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.
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申请公布号 |
US6147365(A) |
申请公布日期 |
2000.11.14 |
申请号 |
US19990364898 |
申请日期 |
1999.08.02 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
FISCHER, FRANK;LITZ, THOMAS;LUGAUER, HANS-JUERGEN;KEIM, MARKUS;BARON, THIERRY;REUSCHER, GUENTER;LANDWEHR, GOTTFRIED |
分类号 |
H01L33/00;H01S5/042;H01S5/30;H01S5/34;H01S5/347;(IPC1-7):H01L29/22;H01L31/025 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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