发明名称 Semiconductor device
摘要 A CCD unit is provided on the surface 11b side of a thin shape section that is formed on a first substrate. In the CCD unit, first cells are provided and disposed in the form of an array in a direction in which the thin shape section extends. An InGaAs photodiode unit is provided at a second substrate 21: in the InGaAs photodiode unit, second cells are provided and disposed in an array in the same direction as the first cells while having equal pitches to the first cells. The first substrate and second substrate are stacked over each other in such a manner that the surface of the first substrate and a second incidence plane of the second substrate oppose each other to ensure that part of a first photoelectric conversion region of the CCD unit correspondingly overlap part of a second photoelectric conversion region of the InGaAs photodiode unit 22 when seen in plan view. <IMAGE>
申请公布号 AU3837200(A) 申请公布日期 2000.11.14
申请号 AU20000038372 申请日期 2000.04.13
申请人 HAMAMATSU PHOTONICS K.K. 发明人 MASAHARU MURAMATSU
分类号 H01L27/148 主分类号 H01L27/148
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