发明名称 HETEROJUNCTION BIPOLAR TRANSISTOR ELEMENT INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To improve the degree of integration of a heterojunction bipolar transistor element integrated circuit by evenly actuating all HBT elements, by arranging the HBT elements in rows so that the number of rows may become an even number and, at the same time, commonly providing base wiring, etc., between each two rows, and separately arranging a pair of collector wiring, etc., on both sides of the base wiring. SOLUTION: When a common signal is inputted to a plurality of pads 5 for base electrode, the signal is supplied to all HBT (heterojunction bipolar transistor) elements 2 through base wiring 4. The elements 2 operate in response to the signal and drive a load device through collector wiring 6 and pads 7 for collector electrode by amplifying the signal by using the currents supplied from emitter electrodes 8 and 8. Consequently, the deterioration of the composite efficiency can be suppressed as compared with the conventional example where all of the base wiring 4 and collector wiring 6 are commonly used and the amplification efficiency, output power, etc., of an HBT integrated circuit can be improved as a whole.
申请公布号 JP2000315693(A) 申请公布日期 2000.11.14
申请号 JP19990122294 申请日期 1999.04.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORI KAZUTOMI;SHINJO SHINTARO;CHOMEI KENICHIRO;SHIMURA TERUYUKI;IKEDA YUKIO
分类号 H01L29/73;H01L21/331;H01L21/822;H01L21/8222;H01L27/04;H01L27/082;H01L29/205;H01L29/737;(IPC1-7):H01L21/331 主分类号 H01L29/73
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