| 摘要 |
<p>A base contact portion for electrically connecting a base electrode to the base region of a bipolar transistor is of planar construction, formed by a repeated construction comprising a high impurity concentration region of the same electric conductivity type as the base region from the emitter region, and an opposite electric conductivity type region or a low impurity concentration region of the same electric conductivity type. This construction makes it possible to suppress the buildup of minor carriers in the base contact region, providing a high switching speed, and to save power consumption. Further, several emitter regions are formed in a stripe pattern and each stripe-like emitter region has formed therein a base region having no base electrode connected thereto, whereby the area of junction between the emitter region and the base region can be increased without providing a space for the electrodes, enlarging the safety operation region.</p> |
