发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, that is provided with an output buffer circuit capable to suppress the occurrence of a very small leakage current, even when surge voltage is applied to an input/output pad. SOLUTION: An output buffer circuit 110 is provided with an inverter 112, that inverts the output data from an internal circuit 20 and outputs the inverted data to an intermediate node ni, a gate connected to the intermediate node ni, and output transistors(TRs) QP1, QN1, QN2, QN3, that are connected in series between a power wire 80 and a ground wire 90. The drains of the output TRs QP1, QN1 are connected to an output node 'no'. The output node no is connected to the input/output pad. The output buffer circuit 110 is provided with a plurality of N-channel MOS TRs, connected in series between the output node 'no' and a ground wire 90.
申请公布号 JP2000312144(A) 申请公布日期 2000.11.07
申请号 JP19990119688 申请日期 1999.04.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 MIYANAGA TAKASHI
分类号 H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H03K17/16;H03K19/003;H03K19/0175;(IPC1-7):H03K17/16;H01L21/823;H03K19/017 主分类号 H01L21/822
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