发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME
摘要 PROBLEM TO BE SOLVED: To suppress degradation in breakdown strength by suppressing oxygen diffusion in a semiconductive film. SOLUTION: After a semiconductive film 15 is formed, a conductive film is continuously formed on it within the same oven. Thus, when a hot water is carried out of the oven into the atmosphere, the oxygen in the atmosphere is prevented from diffusing into the semiconductor film 15. After protecting the semiconductive film 15, the entire conductive film is etched.
申请公布号 JP2000312012(A) 申请公布日期 2000.11.07
申请号 JP20000040580 申请日期 2000.02.18
申请人 TOSHIBA CORP 发明人 SATO SHINGO;TSUCHIYA MASANOBU
分类号 H01L29/06;H01L21/329;H01L29/41;H01L29/78;H01L29/861;(IPC1-7):H01L29/861 主分类号 H01L29/06
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