| 摘要 |
PCT No. PCT/JP98/03480 Sec. 371 Date Apr. 23, 1999 Sec. 102(e) Date Apr. 23, 1999 PCT Filed Aug. 5, 1998 PCT Pub. No. WO99/13139 PCT Pub. Date Mar. 18, 1999A complex (M) which is formed by growing a polycrystalline beta -SiC plate 4 by the thermal CVD method on crystal orientation faces which are unified in one direction of plural plate-like single crystal alpha -SiC pieces 2 that are stacked and closely contacted is subjected to a heat treatment at a temperature in the range of 1,850 to 2,400 DEG C., whereby a single crystal which is oriented in the same direction as the crystal axes of the single crystal alpha -SiC pieces 2 is grown from the crystal orientation faces of the single crystal alpha -SiC pieces toward the polycrystalline beta -SiC plate 4. As a result, single crystal SiC of a high quality in which crystalline nuclei, impurities, micropipe defects, and the like are not substantially generated in an interface can be produced easily and efficiently.
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