发明名称 |
Boosting circuit, particularly for a memory device |
摘要 |
A boosting circuit supplied by a first voltage level and a second voltage level, and having an output line capable of taking a third voltage level, the circuit having at least two distinct circuits for generating the third voltage level, the at least two circuits selectively activatable for generating the third voltage level and selectively coupleable to the output line.
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申请公布号 |
US6144589(A) |
申请公布日期 |
2000.11.07 |
申请号 |
US19980186758 |
申请日期 |
1998.11.05 |
申请人 |
STMICROELECRONICS S.R.L. |
发明人 |
MICHELONI, RINO;CAMPARDO, GIOVANNI;FERRARIO, DONATO;GOLLA, CARLA MARIA |
分类号 |
G11C8/08;G11C8/10;G11C16/08;(IPC1-7):G11C7/00 |
主分类号 |
G11C8/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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