发明名称 |
Semiconductor device having an active layer with no grain boundary |
摘要 |
A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the first semiconductor film to form a region that forms a seed crystal; etching the seed crystal to selectively leave a predetermined crystal face in the seed crystal; covering the seed crystal to form a second semiconductor film; and applying an energy to the second semiconductor film to conduct a crystal growth from the seed crystal in the second semiconductor film.
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申请公布号 |
US6144041(A) |
申请公布日期 |
2000.11.07 |
申请号 |
US19980033156 |
申请日期 |
1998.03.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY, CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;MIYANAGA, AKIHARU;TERAMOTO, SATOSHI |
分类号 |
H01L21/20;H01L21/02;H01L21/268;H01L21/306;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):H01L21/84;H01L29/78 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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