| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting diode array device, together with its manufacturing method, which uses a Bragg reflecting film having a small total thickness. SOLUTION: A layer structure is provided, wherein an N-type buffer layer 12, Bragg reflecting film 22, N-type lower clad layer 23, N-type active layer 24, P-type clad layer 25, and P-type ohmic layer 26 are sequentially formed on an N-type GaAs substrate 10. An N-type upper electrode 41 makes contact with the exposed surface of the N-type lower clad layer 23, while a P-type upper electrode 31 contacts the P-type ohmic layer 26. The Bragg reflecting film 22 comprises a laminated layer, wherein an Al0.2Ga0.8As layer and Al oxide layer acquired by oxidizing an AlAs layer are laminated alternately by five pairs. Since one of the Bragg reflecting films 22 be is made an Al oxide layer, the total film thickness is small. |
