Process for manufacture of integrated circuit device using organosilicate insulative matrices
摘要
The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.
申请公布号
US6143643(A)
申请公布日期
2000.11.07
申请号
US19980111997
申请日期
1998.07.08
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
CARTER, KENNETH RAYMOND;HAWKER, CRAIG JON;HEDRICK, JAMES LUPTON;LEE, VICTOR YEEWAY;MILLER, ROBERT DENNIS;VOLKSEN, WILLI;YOON, DO YEUNG