发明名称 EXPOSURE MONITOR MASK, EXPOSURE REGULATION METHOD AND PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To make it possible to execute the regulation of exposure with high accuracy without excellent line width measurement. SOLUTION: A pair of patterns 104 (104a and 104b) for relative position detection and an exposure monitor pattern 101 held by these patterns for relative position detection are arranged and formed in an x-axis (one direction) in a pattern 100 for exposure detection arranged at an exposure monitor mask. A pair of patterns 105 (105a and 105b) for y-axis direction mispositioning quantity detection are formed across the exposure monitor pattern 101 in the y-axis direction orthogonal with the x-axis direction. The exposure monitor pattern 101 is formed of an opening pattern 102 and an intensity change pattern 103 to monotonously change the irradiation intensity distribution of the exposure light to be transmitted in an x-axis direction and to connect to the pattern in the x-direction.</p>
申请公布号 JP2000310850(A) 申请公布日期 2000.11.07
申请号 JP19990158955 申请日期 1999.06.07
申请人 TOSHIBA CORP 发明人 FUJISAWA TADAHITO;INOUE SOICHI;NOMURA HIROSHI;MORI ICHIRO
分类号 H01L21/027;G03F1/44;G03F1/68;G03F7/20;(IPC1-7):G03F1/08 主分类号 H01L21/027
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