| 摘要 |
It is an object of the present invention to provide a ferroelectric memory device including a load capacitor corresponding to an actual read-out time period appropriately and capable of reading out stored data in a high-speed as well as saving electric power consumption. An applying duration "t" (=2.5n seconds) which generates the maximum value of the differential voltage DELTA V of approximately 0.87V is selected when a voltage value corresponding the minimum detectable value of the sense amplifier AMP1 is 0.8V. Also, capacitance C of the load capacitor Cb is determined at the capacitance ( APPROX 1.25 pF) which maximize the differential voltage DELTA V when the applying duration "t" is 2.5n seconds. Another applying duration "tp" (not shown) of read-out voltage Vp is set as 2.5n seconds the same as the applying duration of the voltage Vd for determining characteristics of a capacitor. A duration required for rewrite operation can be shorten when the applying duration "tp" of read-out voltage Vp is set shorter. In this way, a duration required from read-out operation to rewrite operation can be shorten as well as saving electric power consumption.
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