STATIC MEMORY WITH FOUR TRANSISTORS UNBALANCED AT THEIR LEAKAGE CURRENT AND METHOD FOR CONTROLLING SAME

摘要

The invention concerns a static memory wherein the binary data written in the memory-cell is maintained by applying a bulk effect on each storage transistor (TM3, TM4) so as to obtain a leakage current from each access transistor (TA1, TA2) at least ten times greater than the leakage current of each storage transistor.