| 摘要 |
PROBLEM TO BE SOLVED: To form an N+-type layer which becomes the emitter contact of a bipolar transistor at a low temperature. SOLUTION: An N--type epitaxial layer 2 is grown on an N-type silicon substrate 1, and a silicon dioxide film 3 is formed, after which a P-type MBE layer 4 and a P--type MBE layer 5 are grown. Next, after forming a silicon dioxide film 6 and a CVD silicon nitride film 8, an emitter is opened with a photoresist 9 as a mask. Next, in an MBE device, antimony-doped amorphous silicon is deposited at a room temperature, which is thereafter subjected to a solid-phase growing step under a heat treatment at 730 deg.C to form an N+-type layer 10 having an epitaxial/polysilicon interface, which is then patterned to form an emitter contact. |
