发明名称 CHEMICAL VAPOR DEPOSITION SYSTEM AND METHOD
摘要 <p>A chemical vapor deposition (CVD) system is provided for processing a substrate (110). The system (100) includes a heater muffle (115), a chamber (120) having an injector assembly (130) for introducing chemical vapor to process the substrate (110), and a belt (105) for moving the substrate through the muffle and chamber. The belt (105) has an oxidation-resistant coating (175) to reduce formation of deposits thereon. The coating (175) is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating (175) comprises a securely-adhered oxide layer (185) that is substantially free of transition metals. Preferably, the oxidation-resistant coating (175) comprises aluminum oxide. More preferably, the coating (175) comprises an aluminum oxide layer (185) securely adhered over a nickel aluminide layer (180).</p>
申请公布号 WO2000065121(A1) 申请公布日期 2000.11.02
申请号 US2000005630 申请日期 2000.03.03
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