| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which has improved electrical connection performance between its connection pad and bump, and its manufacturing method. SOLUTION: First, a mutual connection part is formed on a semiconductor device substrate. For instance, a conductive barrier layer covers the mutual connection part, a protective layer covers the conductive barrier layer and an aperture, through which a part of the conductive barrier layer is exposed, is formed in the protective layer. Or the protective layer 22 covers the mutual connection part, the aperture 24 through which the mutual connection part is exposed is formed in the protective layer 22, and the conductive barrier layer 32 covers the mutual connection part in the aperture 24. |
