| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for fabricating a semiconductor device having interconnection or plugs buried in an insulation film in which an oxide film can be removed from the surface of a lower interconnection while preventing intrusion of copper from a via hole or a trench into an interlayer insulation film. SOLUTION: The method for fabricating a semiconductor device comprises a step for forming a first interconnection 13 of copper or copper alloy, a step for covering the upper surface of a first conductive film with an insulating barrier film 14, a step for forming an interlayer insulation film 15 covering the insulating barrier film 14, a step for forming a contact hole 15a at an upper part of the first conductive film in the interlayer insulation film 15, a step for forming a barrier metal side wall 16s of the contact hole 15a, a step for exposing the first conductive film by etching the insulating barrier film 14 through the contact hole 15a using the side wall 16s as a mask, and a step for forming a plug in the contact hole 15a by burying a second conductive film therein.
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