| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of treating a wafer surface, by which particles from an electrode plate itself of a wafer treatment apparatus, particularly from the inner walls of small holes in the electrode plate, which is easily worn out, can be reduced during wafer treatment processes and, when substances generated by a reaction gas are adhered to the small-diameter holes, these substances do not peel or contaminate, products or the like. SOLUTION: A wafer treatment apparatus, having an electrode plate 10 in which a plurality of small-diameter holes are formed, is used to treat a wafer surface by introducing a reaction gas containing at least a fluorocarbon gas into the treatment apparatus. In this method, the an electrode plate is made 5-15 mm thick, and the surface roughness Ra of inside walls of the small holes in the electrode plate is made 0.1-5.0 μm. |
