| 摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam exposure system where quadruple aberration generated in a deflector is reduced. SOLUTION: A mask 3 is irradiated with an illuminating optical system, and beams passing through the pattern on the mask are image-formed on a wafer by two lenses 1 and 2. The pattern on the mask is reduced/copied on the wafer 4. A scattering aperture 5 for cutting scattered beams is installed between the lens 1 and the lens 2. The prospective half angle of a deflector coil and an A-Turn value in at least one of deflectors 7 formed of C1-C8 and P1-P4 are set, so that not only 3θcomponents and 5θcomponents of a magnetic filed generated by the deflectors but also 7θcomponents are hardly produced. Thus, quadruple aberrations generated in the deflector are reduced.
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