Method of producing a semiconductor device by dry etching two superposed SiO2 layers,申请号EP19910112056-传众专利搜索

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发明名称	Method of producing a semiconductor device by dry etching two superposed SiO2 layers
摘要
申请公布号	EP0469401(B1)	申请公布日期	2000.11.02
申请号	EP19910112056	申请日期	1991.07.18
申请人	SEIKO EPSON CORPORATION	发明人	NAMOSE, ISAMU
分类号	H01L21/311;H01L21/302;H01L21/3065;H01L21/3105;H01L21/3205;H01L21/768;(IPC1-7):H01L21/311	主分类号	H01L21/311
代理机构		代理人
主权项
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