ASYMMETRIC OPTICAL WAVEGUIDE NITRIDE LASER DIODE STRUCTURE AND ITS FORMATION AND MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide an asymmetric optical waveguide nitride laser diode structure which does not require a p-type waveguide layer nor tunnel barrier layer containing aluminum in a large amount. SOLUTION: An asymmetric optical waveguide nitride laser diode structure 400 has an active layer 120 having first and second surfaces, a transition layer 429 which is brought into contact with the first surface of the active layer 120, a p-type clad layer 130 adhered adjacently to the transition layer 429, and an n-type layer 116 which is brought into contact with the second surface of the active layer 120.