发明名称 SURFACE EMITTING SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR
摘要 The present invention aims at providing a light source for a semiconductor laser beam scanner having high resolution in scanning and a high degree of mounting freedom, and suitable for emitting a laser beam from the surface. Therefore, a surface emission type semiconductor laser includes at least a first mirror 102, an active layer 103, a current constriction layer 113, a contact layer 106, and a second mirror 111, which are formed on a semiconductor substrate 101; wherein the current constriction layer 113 is made of a stripe AlAs layer 105, and an Al oxide layer 108 formed to surround the AlAs layer 105; the region of the contact layer 106, which overlaps the Al oxide layer, is formed in a comb shape 109, and independent contact electrodes 110 are respectively formed on the upper surfaces of the teeth of the comb shape 109 of the contact layer. <IMAGE>
申请公布号 EP0940895(A4) 申请公布日期 2000.11.02
申请号 EP19980900727 申请日期 1998.01.22
申请人 SEIKO EPSON CORPORATION 发明人 KONDO, TAKAYUKI;KANEKO, TAKEO;MORI, KATSUMI
分类号 H01S5/042;H01S5/183;H01S5/42 主分类号 H01S5/042
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