METHOD OF FORMING A CAPACITOR OF SEMICONDUCTOR USING AMORPHOUS SILICON

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device using amorphous silicon is provided to improve the productivity of a semiconductor device by stabilizing a capacitor formation process. CONSTITUTION: A lower electrode, a sacrificial layer, and an anti-reflective layer are formed sequentially on an upper portion of a semiconductor substrate for forming a semiconductor device in order to form a capacitor. The lower electrode is formed by using amorphous silicon with low reflectivity when performing an exposure process of a deep ultraviolet ray wavelength area. An exposure change according to the thickness uniformity of the sacrificial layer and a condition of the anti-reflective layer is minimized by using the amorphous silicon with low reflectivity.