POWER SWITCHING DEVICE USING INSULATED GATE BIPOLAR TRANSISTOR

摘要

PURPOSE: A switching device is provided to be capable of controlling each of constituting cells within an insulating gate bipolar transistor using different separated gate electrodes. CONSTITUTION: A switching device includes the first insulating gate bipolar transistor(10). The second insulating gate bipolar transistor(12) is in serial connected to the first insulating gate bipolar transistor(10). Resistor(R1,R2) are connected between a gate of the first insulating gate bipolar transistor(10) and a gate of the second insulating gate bipolar transistor(12). The value of resistance in the resistor(R1) connected to the gate of the first insulating gate bipolar transistor(10) is lower than that in the resistor(R2) connected to the gate of the second insulating gate bipolar transistor(12). The resistors(R1,R2) are connected in parallel.