| 摘要 |
PURPOSE: A repairing method of a memory device is provided to give the advantage without using a process of cutting off a fuse and requiring an additional process by comparing an address to be applied with a previously latched address to select a repair word line, if the address and the previously latched address are equal. CONSTITUTION: Write data and read data are compared to each other through operations of a writing and a reading for each cell. Using the comparison result, it is determined whether each memory cell has a defect generated. When the write and read data are same to each other, a normal word line is selected while an address signal corresponding to the normal word line is not latched to a latch. Otherwise, the address signal corresponding to the normal word line is latched to the latch. The latched address signal is compared with an address signal inputted from the external. When the latched address signal and address signal are equal, a repair word line is selected and activated.
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