| 摘要 |
A process for producing a semiconductor device having an interlayer insulating film of low dielectric constant and interconnects of low resistance and operable at a high speed, which comprises: a step of heat-treating a semiconductor substrate having a lower interconnect, a step of depositing, on the heat-treated semiconductor substrate, an insulating film having a dielectric constant of 3.5 or less, a step of making holes in the insulating film, and a step of growing a metal only in the holes by selective chemical vapor deposition. |
