SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to be capable of improving a ferroelectric property(that is, the amount of residual polarity) and preventing degradation of a ferroelectric property. CONSTITUTION: A method for manufacturing a semiconductor devices forms the first interlayer dielectric(6) covering an integrated circuit on a semiconductor substrate(1) in which the integrated circuit having at least one diffusion layer is formed. A ferroelectric capacitor(10) consisting of a lower electrode(7), a ferroelectric film(8) and an upper electrode(9) is formed on the first interlayer dielectric(6). The second interlayer dielectric(11) covers the ferroelectric capacitor and the first interlayer dielectric and is formed to have an extension force against the ferroelectric capacitor. The first contact holes reaching the diffusion layer(2) and the lower electrode are formed in the second interlayer dielectric. The first heat treatment is then implemented at the temperature of about 450 Celsius degree under oxygen atmosphere. The first metal line(12) reaching the diffusion layer and the lower electrode through the first contact holes is formed. The third interlayer dielectric(13) covers the first metal line and the second interlayer dielectric and is formed to have an extension force against the ferroelectric capacitor. The second contact holes reaching the upper electrode are formed in the third interlayer dielectric. The second heat treatment is then implemented at the temperature of about 450 Celsius degree under oxygen atmosphere. The second metal line(14) reaching the upper electrode through the second contact holes is formed.