METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to reduce a process time by simplifying a manufacturing process. CONSTITUTION: A buried ion implantation layer(22) is formed on a semiconductor substrate(21). The first oxide layer is formed on the whole face. The first oxide layer of an isolation region is etched selectively. Dopant ions are implanted on the isolation region by using the patterned the first oxide layer as a mask. The first oxide layer as the mask layer is removed. The second oxide layer(24) is formed on the isolation region including dopant ions. An epitaxial layer(25) is formed by performing selectively an epitaxial growth process for the semiconductor substrate(21). The remaining layer is removed from the second oxide layer(24) of the isolation layer.