发明名称 FLATTENING METHOD OF SEMICONDUCTOR FILM SURFACE
摘要 PROBLEM TO BE SOLVED: To provide a flattening method of a semiconductor film surface for easily flattening a surface of a semiconductor film in which concave and convex portions exist. SOLUTION: Ceramics grains are blown to a surface of a semiconductor film 1 formed on an approximately whole surface of the substrate 2 using an abrasive grain discharge nozzle 3. The abrasive grain discharge nozzle 3 repeats a high speed reciprocating movement in an X direction at a constant period while it injects ceramic grains 4, i.e., abrasive grains. The ceramic particles 4 is blown to a whole surface of the semiconductor film 1 by moving the substrate 2 to a Y direction against the abrasive grain discharge nozzle 3. Thereby, a flattening processing is carried out.
申请公布号 JP2000301456(A) 申请公布日期 2000.10.31
申请号 JP19990111239 申请日期 1999.04.19
申请人 SHARP CORP 发明人 IZUMI YOSHIHIRO;TERANUMA OSAMU
分类号 B24C1/00;B24C11/00;H01L21/304;(IPC1-7):B24C1/00 主分类号 B24C1/00
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