Integrated power semiconductor transistor with current sensing

摘要

The present invention relates to semiconductor integrated transistors comprising a conduction section and a sense section for the current flowing through the conduction section both sections being located within a region. To ensure that sensing is accurate and takes into account that the surface of the power transistor reach in operation a non-uniform temperature, the conduction section and sense section are located in such a manner that, in operation, the temperature distributions of the two sections are substantially equal.