| 摘要 |
Adhesive force on less than all die on a cutting support film after cutting is reduced such that only selected die are readily displaceable from the tape or film. In one embodiment, a semiconductor wafer surface is adhered to an area on radiation sensitive tape. The wafer is processed on the tape. Cutting such wafer into individual die is one example processing. Less than all of the tape area is then exposed to radiation effective to reduce degree of adhesion of the wafer surface to the tape. At least a portion of the processed wafer and at least a portion of the tape which has been exposed to the radiation are then separated from one another.
|
