Sensor element

摘要

PCT No. PCT/EP96/04947 Sec. 371 Date May 14, 1999 Sec. 102(e) Date May 14, 1999 PCT Filed Nov. 12, 1996 PCT Pub. No. WO98/21756 PCT Pub. Date May 22, 1998A sensor element has a field effect transistor sensitive to a physical quantity to be detected. The gate electrode of the transistor is implemented as a floating gate. The sensor element has therefore integrated therein a sensor cell and a non-volatile memory. The operating point of the transistor can be adjusted permanently by means of the floating gate on which charges can be stored in a non-volatile manner. In addition, charges corresponding to a detected physical quantity can be stored on the floating gate via a simple circuit in a non-volatile manner.