| 摘要 |
PROBLEM TO BE SOLVED: To perform silicon single crystal pulling at a high rate without using any radiation shield, to inhibit oxidation induced stacking faults(OSF) or crystal originated pits(COP) from being caused in the crystal and to charge a larger amount of raw material silicon into the crucible at a time by placing a chamber whose volume is changeable, in a silicon single crystal pulling device for heating a quartz glass crucible containing raw material silicon to melt it and pulling a silicon single crystal. SOLUTION: In this device, a chamber 2 is divided into two chambers, i.e., a primary chamber 3 and a secondary chamber 4, both of which are joined together through a bellows 11, to make the volume of the chamber 2 changeable by extending or shrinking the bellows 11. The secondary chamber 4 placed on the primary chamber 3, functions as a receiver for receiving raw material silicon S when the single crystal pulling operation is initiated, and also for receiving a pulled silicon single crystal 10 during the single crystal pulling operation, and consists of the freely extensible/ shrinkable bellows 11 that is made of a heat-resistant metal, and a flat-platelike cover 12 that is air-tightly fitted to the bellows 11 in a freely attachable and detachable manner, and further, is extended and shrunk by a motor-driven extension/shrinkage mechanism 13.
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