发明名称 |
Method of forming asymmetrically doped source/drain regions |
摘要 |
Asymmetrically doped source/drain regions of a transistor are formed employing protective insulating layers to prevent a portion of the gate electrode from receiving an excessive impurity implantation dose and penetrating through the underlying gate insulating layer into the semiconductor substrate. Sidewall spacers are employed during heavy implantation.
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申请公布号 |
US6140186(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19980196439 |
申请日期 |
1998.11.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LIN, MING-REN;FANG, PENG;WOLLESEN, DONALD L. |
分类号 |
H01L21/266;H01L21/336;H01L21/8238;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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