发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To improve the opening ratio of the pixel section of an active-matrix liquid crystal display device in which drive circuits such as a shift register, a buffer circuit, etc., are mounted on the same substrate, and at the same time, to provide an optimum TFT constitution. SOLUTION: In a buffer circuit, an n-channel TFT provided with an LDD overlapping a gate electrode is formed, and in the n-channel TFT of a pixel section, an LDD which does not overlap the gate electrode is provided. The retention volume provided in the pixel section is formed of a light shielding film 156, a dielectric film 157 formed on the film 156, and pixel electrodes 160. In particular, the light shielding film 156 is constituted of an aluminum film, and the dielectric film 157 is constituted of an aluminum oxide film formed by anodic oxidation.</p>
申请公布号 JP2000299469(A) 申请公布日期 2000.10.24
申请号 JP20000033377 申请日期 2000.02.10
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;MURAKAMI TOMOHITO;KOYAMA JUN;TANAKA YUKIO;KITAKADO HIDETO
分类号 G09F9/30;G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 主分类号 G09F9/30
代理机构 代理人
主权项
地址