发明名称 Nonvolatile memory and writing circuit for same
摘要 A writing circuit for a nonvolatile memory has eight circuit units for bit parallel processing. Each circuit unit has 16 first D flip-flops for address 0 to address F, and one second D flip-flop. The eight circuit units hold in their own 16 first D flip-flops write data of 8 bits fed in bit parallel fashion with respect to each of the 16 addresses. The totally eight second D flip-flops simultaneously hold 8 bits of verify data read from memory cells in bit parallel fashion. In verify operation, in each of the eight circuit units, the write data held in the first D flip-flops are given 16 address attributes, respectively, and compared with the verify data held by the second D flip-flop in an address sequence of the 16 address attributes to make sure of coincidence between the data.
申请公布号 US6137717(A) 申请公布日期 2000.10.24
申请号 US19980203304 申请日期 1998.12.01
申请人 SHARP KABUSHIKI KAISHA 发明人 SAKAMOTO, YASUHIKO
分类号 G11C16/02;G11C16/10;G11C16/34;(IPC1-7):G11C16/04 主分类号 G11C16/02
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