| 摘要 |
In a semiconductor device manufacturing method, a gate insulating film is formed on a silicon substrate, a conductive film made of a conductive material is formed on a insulating film, an anti-reflecting coating made of an organic material is formed on the conductive film, a photosensitive resist film is formed on the anti-reflecting coating, a predetermined optical image on the resist film is developed by exposure to form a resist pattern, the anti-reflecting coating is then selectively removed by dry etching using a plasma of a gas mixture containing oxygen gas, a reactive gas, and an inert gas, while using the resist pattern as a mask, thereby forming a pattern, and the conductive film is etched by using the resist pattern as a mask, thereby forming an electrode.
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