| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing method which is capable of dispensing with a polishing liquid measuring/mixing operation, reducing abrasive material in consumption, and employing an inexpensive abrasive material feeder. SOLUTION: This polishing method is carried out in a manner, where a metal film 21 is formed on an insulating film 23 with a groove being polished with a one-pack type polishing liquid which is a mixture of an oxidizing material, material that turns oxide water-soluble, and water and left to stand for a certain time. When the metal film 21 is subjected to chemical mechanical polishing with a mixed polishing liquid of water, anticorrosive material and surfactant, a thin oxide layer is formed on the surface of the metal film 21. Then, when a material is supplied, which turns an oxide water-soluble, the oxide layer is dissolved and reduced in thickness. The thinned oxide layer is exposed to the oxidizing material again and increased in thickness, and a CMP operation proceeds repeating this reaction. When the polishing liquid is within shelf life, etching rate is limited to 1.0 nm/min or lower at a polishing rate 87 to 93 nm/min.
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