发明名称 METHOD AND DEVICE FOR CHEMICAL VAPOR DEPOSITION
摘要 PROBLEM TO BE SOLVED: To eliminate a film of poor quality in the initial state after starting the formation of the film by optimizing the control on the opening and closing of a shutter. SOLUTION: After a first process, in which a substrate 9 is set up in a treating vessel 1 incorporating a heating element 4, and at the same time, the inside of the vessel 1 is maintained at a prescribed high temperature by setting the shutter 7 to a closed position, at which the heating element 4 is optically shielded from the substrate 9 and supplying energy to the heating element 4, a second process in which the introduction of a source gas into the vessel 1 is started. After the pressure in the vessel 1 and the flow rate of the gaseous start material are adjusted to prescribed values, a third process in which a prescribed thin film is formed on the substrate 9 by causing the shutter 7 to retreat to its opened position, at which the heating element 4 is not optically shielded from the substrate 9, is performed.
申请公布号 JP2000299313(A) 申请公布日期 2000.10.24
申请号 JP19990107473 申请日期 1999.04.15
申请人 ANELVA CORP 发明人 NOMURA HIDEJI;IKEDA KOJI;MORIZAKI HITOSHI;WATANABE SHUGO
分类号 H01L21/31;C23C16/44;C23C16/46;(IPC1-7):H01L21/31 主分类号 H01L21/31
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