Process utilizing selective TED effect when forming devices with shallow junctions

摘要

A process for device fabrication in which transient enhanced diffusion (TED) is used to obtain a desired distribution of dopants in a crystalline substrate is disclosed. In the process, at least two dopants and a non-dopant are introduced into the same region of a substrate. The diffusion of the dopants in the substrate during a subsequent thermal anneal is affected by the non-dopant. The amount of non-dopant introduced into the substrate is selected to obtain, in conjunction with the subsequent thermal anneal, the desired distribution of dopants in the substrate. The concentration of the non-dopant is in the range of about 6x1016 atoms/cm3 to about 3x1021 atoms/cm3. The substrate is then annealed at a temperature in the range of about 700 DEG C. to about 950 DEG C. to obtain the desired dopant profile.