| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which can perform high speed access even when power consumption is reduced and capacity is increased. SOLUTION: A semiconductor memory includes a sense amplifier block sa, a pair of memory cell block mc0, mc1, a pair of word driver block wd1-0, wd1-1, a pair of decoder block dec1-0, dec1-1, and a control circuit block cnt101. Inverters INV0, INV1 provided in the control circuit block 101 reverse potential levels of block selection signals BS0, BS1 respectively. Level shifters LS0, LS1 amplify output of the inverters INV0, INV1 respectively, and generate equalizing signals EQ0, EQ1 that h a potential is swung between a second power source potential and a ground potential.
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