SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having an interlayer insulating film which is improved in dry etching selectivity ratio. SOLUTION: An interlayer insulating film composed of a plurality of laminated films of different materials is provided on a substrate, and at least one of the laminated films, preferably the lowest laminated film is composed of an aluminum opxide film 206 or of a boron nitride film. Then Cu wiring 214' is formed in a plurality of grooves formed into the interlayer insulating film, so that the adjacent wires of the wiring 214' is separated from each other by the insulating film. The layer lying above the aluminum oxide film 206 is set as an insulating film having a low dielectric constant, for example, an organic SOG film 207.