发明名称 |
Reduction of oxide stress through the use of forward biased body voltage |
摘要 |
A method of reading a flash memory (EEPROM) device by applying zero to all bitlines except for the bitline to which the cell being read is attached, applying a positive voltage to the wordline to which the cell being read is attached and applying a positive voltage to the p-well in which the cell being read is formed. A positive voltage is applied to the bitline to which the cell being read is attached.
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申请公布号 |
US6137727(A) |
申请公布日期 |
2000.10.24 |
申请号 |
US20000490353 |
申请日期 |
2000.01.24 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CLEVELAND, LEE |
分类号 |
G11C16/04;G11C16/26;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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