发明名称 POSITIVE RADIATION-SENSITIVE COMPOSITION AND MANUFACTURE OF RESIST PATTERN BY USING SAME
摘要 PROBLEM TO BE SOLVED: To provide the positive radiation-sensitive composition having a resolution capable of forming a subquarter micron pattern composition and high in sensitivity. SOLUTION: This positive radiation-sensitive composition is characterized by containing a polymer having structural units each represented by formula I containing A to be decomposed by action of an acid and solubilized in an alkali and formula II and an acid generator to be decomposed by action of an acid and solubilized in an alkali, and the method for manufacturing the resist pattern by using this composition is provided, too. In formulae I and II, X is a halogen atom or a cyano group, and Y is a 1-4C alkyl group or same as X; A is an organic group having >=1 silyl group; and G is a 1-10C haloalkyl or haloaryl or haloaralkyl group.
申请公布号 JP2000298346(A) 申请公布日期 2000.10.24
申请号 JP19990106857 申请日期 1999.04.14
申请人 TORAY IND INC 发明人 NIO HIROYUKI;TAMURA KAZUTAKA;OBAYASHI GENTARO
分类号 H01L21/027;G03F7/039;G03F7/075 主分类号 H01L21/027
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