Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth

摘要

This invention relates generally to a method of trench isolation used in the fabrication of semiconductor devices, wafers and the like. More specifically, the present invention related to a method of trench isolation using chemical vapor deposition (CVD) with TEOS and ozone to deposit a trench fill oxide prior to growing a thermal oxide layer or liner on sidewalls of the trench. The method provides void-free as-deposited dielectric CVD films into gaps or trenches with non-vertical, vertical and or re-entrant profiles.