发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To analogically measure a transistor characteristic. SOLUTION: A test circuit has a first and a second 3st buffers TBI and TB2 connected to two points of an internal output terminal for switching a normal output mode and a test mode. At the first 3st buffer TB1 side, a first and a second transistors Tr1 and Tr2 which operate in the normal output mode are connected, and a first pad A disposed between the first transistor Tr1 and second transistor Tr2, a second pad B connected to the second 3st buffer TB2 side, a special power source V and a special ground G are provided. In the test mode, an optional voltage is impressed to the first and second pads A and B and a voltage of the special power source V is made an equal potential to a potential of the first pad A, and a current flowing in the first pad A is measured.
申请公布号 JP2000292494(A) 申请公布日期 2000.10.20
申请号 JP19990094836 申请日期 1999.04.01
申请人 NEC CORP 发明人 YOKOYAMA KATSUHIKO
分类号 H01L21/822;G01R31/26;G01R31/28;H01L27/04;(IPC1-7):G01R31/28 主分类号 H01L21/822
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