发明名称 RESIN SEALING METHOD OF SEMICONDUCTOR CHIP AND RELEASE FILM USED THEREFOR
摘要 PROBLEM TO BE SOLVED: To prevent resin richness in a terminal and a top surface of a post electrode by using a polytetrafluoroethylene film whose thermal contraction coefficient in both lengthwise and breadthwise directions during resin sealing, the difference of the thermal contraction coefficient and ratio of elastic modulus in lengthwise and breadthwise directions have a specific value, respectively. SOLUTION: A polytetrafluoroethylene film whose thermal contraction coefficient in lengthwise and breadthwise directions for about 10 minutes at about 175 deg.C is about 5% or less and, difference of the thermal contraction coefficient is about 3% or less and ratio of elastic modulus in lengthwise and breadthwise directions is about 0.5 to 2.0 is used for resin sealing 4 of a semiconductor chip 2. Since lengthwise stress and breadthwise stress of a polytetrafluoroethylene film can be made almost equal and small enough by this method, it does not wrinkle. Therefore, adhesion condition of an interface between a polytetrafluoroethylene film and a terminal 22 by bite of the terminal 22 into the polytetrafluoroethylene film can be held stable.
申请公布号 JP2000294579(A) 申请公布日期 2000.10.20
申请号 JP19990098511 申请日期 1999.04.06
申请人 NITTO DENKO CORP 发明人 TACHIBANA TOSHIMITSU;SATO KENJI;IIMURA MITSUO
分类号 H01L21/56;B29C45/14;B29L31/34;(IPC1-7):H01L21/56 主分类号 H01L21/56
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