发明名称 COMPOSITION FOR FILM UNDER RESIST
摘要 PROBLEM TO BE SOLVED: To make a composition for film under resist have both of adhesion to a resist, resistance to a resist developer and have resistance to oxygen ashing in the removal of the resist by incorporating a hydrolysate and/or a partial condensation product of a specified compound. SOLUTION: The composition for a film under a resist contains a hydrolysate and/or a partial condensation product of a compound of the formula Si(OR1)4, wherein R1 is a monovalent organic group such as alkyl, aryl or allyl, the alkyl is, e.g. methyl or ethyl, is preferably a 1-5C alkyl, may be linear or branched and may be a fluoroalkyl, and the aryl is, e.g. phenyl or naphthyl. The compound of the formula is, e.g. tetramethoxysilane, tetraethoxysilane. More preferably, the compound is tetra-n-propoxysilane, tetramethoxysilane or tetraethoxysilane. Two or more of such compounds may be simultaneously used.
申请公布号 JP2000292931(A) 申请公布日期 2000.10.20
申请号 JP19990103688 申请日期 1999.04.12
申请人 JSR CORP 发明人 NISHIKAWA MICHINORI;SUGITA HIKARI;YAMADA KINJI;SAITO AKIO;OTA YOSHIHISA
分类号 H01L21/027;C08L83/02;C08L83/04;G03F7/11 主分类号 H01L21/027
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